Modeling Steel Frame Buildings in Three Dimensions. II: Elastofiber Beam Element and Examples

This is the second of two papers describing a procedure for the three-dimensional nonlinear time-history analysis of steel-framed buildings. An overview of the procedure and the theory for the panel zone element and the plastic hinge beam element are presented in part I. In this paper, the theory for an efficient new element for modeling beams and columns in steel frames called the elastofiber element is presented, along with four illustrative examples. The elastofiber beam element is divided into three segments—two end nonlinear segments and an interior elastic segment. The cross sections of the end segments are subdivided into fibers. Associated with each fiber is a nonlinear hysteretic stress-strain law for axial stress and strain. This accounts for coupling of nonlinear material behavior between bending about the major and minor axes of the cross section and axial deformation. Examples presented include large deflection of an elastic cantilever beam, cyclic loading of a cantilever beam, pushover analysis of a 20-story steel moment-frame building to collapse, and strong ground motion analysis of a two-story unsymmetric steel moment-frame building.     

Thermomechanical Framework for the Constitutive Modeling of Asphalt Concrete

This study is concerned with the constitutive modeling of asphalt concrete. Unlike most constitutive models for asphalt concrete that do not take into account the evolution of the microstructure of the material, this study incorporates the evolution of the microstructure by using a framework that recognizes that a body’s natural configurations can evolve as the microstructure changes. The general framework, on which this study is based, is cast within a full thermomechanical setting. In this paper, we develop models within the context of a mechanical framework that stems from the general framework for models based on the full thermodynamic framework and the resulting equations represent a nonlinear rate type viscoelastic model. The creep and stress relaxation experiments of Monismith and Secor are used for validating the efficacy of the model, and it is found that the predictions of the theory agree very well with the available experimental results. The advantages of using such a framework are many, especially when one wants to model the diverse mechanical and thermodynamic response characteristics of asphalt and asphalt concrete.     

A genetic algorithm for the design space exploration of datapaths during high-level synthesis

High-level synthesis is comprised of interdependent tasks such as scheduling, allocation, and module selection. For today's very large-scale integration (VLSI) designs, the cost of solving the combined scheduling, allocation, and module selection problem by exhaustive search is prohibitive. However, to meet design objectives, an extensive design space exploration is often critical to obtaining superior designs. We present a framework for efficient design space exploration during high-level synthesis of datapaths for data-dominated applications. The framework uses a genetic algorithm (GA) to concurrently perform scheduling and allocation with the aim of finding schedules and module combinations that lead to superior designs while considering user-specified latency and area constraints. The GA uses a multichromosome representation to encode datapath schedules and module allocations and efficient heuristics to minimize functional and storage area costs, while minimizing circuit latencies. The framework provides the flexibility to perform resource-constrained scheduling, time-constrained scheduling, or a combination of the two, using a simple and fast list-scheduling technique. A graded penalty function is used as an objective function in evaluating the quality of designs to enable the GA to quickly reach areas of the search space where designs meeting user specified criteria are most likely to be found. Since GAs are population-based search heuristics, a unique feature of our framework is its ability to offer a large number of alternative datapath designs, all of which meet design specifications but differ in module, register, and interconnect configurations. Many experiments on well-known benchmarks show the effectiveness of our approach.     

A Comparative Study of Explicit Frequency and Conventional Signal Representations for Speech Recognition

Krishnan, S., and Rao, P. V. S., A Comparative Study of Explicit Frequency and Conventional Signal Representations for Speech Recognition,Digital Signal Processing6(1996), 249–264.The performance of a speech recognition system depends to a large extent on the signal representation strategy. It is therefore important to evaluate various signal representations, with a view to comparing their relative performance on speech recognition tasks. Various comparative studies have been reported earlier in the literature in this respect. However, these studies are limited to comparing some subsets of representations on different kinds of recognition tasks. In this sense, they preclude a fair comparison of the representations on the same task. In contrast, we attempt here a systematic and fairly comprehensive comparison of signal representations along various dimensions (frequency and amplitude scales, speaker normalization, and two statistical classifiers) on a standard (TIMIT) speech database. This study shows that the line spectrum pair frequency representation augmented with spectral amplitudes yields the best recognition performance.     

Quantum size effect in thin films

When the thickness of a film is of the order of the de Broglie wavelength of the electron, size effects appear in the electrical properties of the material. In this paper we derive the current in the presence of a magnetic field perpendicular to the plane of the film. We use the quantum mechanical density-matrix formalism. Unlike previous works we obtain an exact expression for the current. It is found that the current has a non-linear behavior with the electric field. The current also oscillates with the thickness of the film.     

Curing Studies of Ladder-Like Poly(allylsilsesquioxane) and its copolymers by Differential Scanning Calorimetry

Summary Using stepwise coupling polymerization method, three ladder-like poly(allylsilsesquioxane)s have been synthesized. The prepared ladder-like polymers contain (i) allyl, (ii) allyl and methyl and (iii) allyl and phenyl as side chain groups. They were characterized by FTIR, NMR, WAXD, DSC and TGA. Characterization indicated that they had ladder-like structure. All the polymers were cured by 2,2-dibenzoyl peroxide (1% W/W) and the kinetics for the bulk polymerization of these polysilsesquioxanes was followed by dynamic DSC. The Ozawa and Kissinger methods were used to calculate activation energies for curing of these polysilisesquioxanes. Cured samples were characterized by FTIR, DSC and TGA.     

Formation of a DO19 phase in zirconiumaluminium martensites

Journal of Materials Science -     

8 MeV electron irradiation effects in silicon photo-detectors

Results of investigations on the electrical properties of n⁺-p-p⁺ silicon (Si) photo-detectors irradiated with 8 MeV electrons are presented. The photo-detectors were irradiated with electrons of doses up to 100 kGy. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics under dark conditions were measured as a function of dose. A significant change in the diffusion component of the saturation current is observed after irradiation, while the generation-recombination component of the saturation current remains almost unchanged. The series resistance is found to increase with increasing dose while the shunt resistance and carrier concentration decrease with dose. Optoelectronic properties, namely short circuit current I_sc, open circuit voltage V_oc under air mass zero illumination and spectral response, were measured at various doses. From the spectral responses of the devices, the minority carrier diffusion length was estimated.     

off-State Degradation in Drain-Extended NMOS Transistors: Interface Damage and Correlation to Dielectric Breakdown

Off-state degradation in drain-extended NMOS transistors is studied. Carefully designed experiments and well-calibrated simulations show that hot carriers, which are generated by impact ionization of surface band-to-band tunneling current, are responsible for interface damage during off-state stress. Classical on-state hot carrier degradation has historically been associated with broken equivSi-H bonds at the interface. In contrast, the off-state degradation in drain-extended devices is shown to be due to broken equivSi-O- bonds. The resultant degradation is universal, which enables a long-term extrapolation of device degradation at operating bias conditions based on short-term stress data. Time evolution of degradation due to broken equivSi-O- bonds and the resultant universal behavior is explained by a bond-dispersion model. Finally, we show that, under off-state stress conditions, the interface damage that is measured by charge-pumping technique is correlated with dielectric breakdown time, as both of them are driven by broken equivSi-O- bonds.